|TUPML025||Long Lifetime Spin-Polarized GaAs Photocathode Activated by Cs2Te||1589|
|SUSPF049||use link to see paper's listing under its alternate paper code|
Funding: This work was supported by the Department of Energy Grant Nos. DE-SC0016203 and NSF PHY-1461111.
High intensity and highly spin-polarized electron source is of great interest to the next generation Electron Ion Colliders. GaAs prepared by the standard activation method, which is the most widely used spin-polarized photocathode, is notorious for its vacuum sensitivity and short operational lifetime. To improve the lifetime of GaAs photocathodes, we activated GaAs by Cs2Te, a material well known for its robustness. We confirmed the Cs2Te layer forms negative electron affinity on GaAs with a factor of 5 improvement in lifetime. Furthermore, the new activation method had no adverse effect on spin-polarization. Considering Cs2Te forms much thicker activation layer (~ 2 nm) compared to the standard activation layer (~ monolayer), our results trigger a paradigm shift on new activation methods with other robust materials that were avoided for their thickness.
|DOI •||reference for this paper ※ https://doi.org/10.18429/JACoW-IPAC2018-TUPML025|
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